SEMIX653GAL176HDS_09 Datasheet, PDF (1/6 Pages) Semikron International – Trench IGBT Modules

SEMiX653GAL176HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX653GAL176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 1000 V
V_GE ≤ 20 V
V_CES ≤ 1700 V
T_j = 125 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Freewheeling diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 450 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE = 15 V
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 18 mA
V_GE = 0 V
V_CE = 1700 V
T_j = 25 °C
T_j = 125 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
Values
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
900
2900
-40 ... 150
545
365
450
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2
2.45
V
2.45
2.9
V
1
1.2
V
0.9
1.1
V
2.2
2.8
mΩ
3.4
4.0
mΩ
5.2
5.8
6.4
V
0.1
0.3
mA
mA
39.6
nF
1.65
nF
1.31
nF
4200
nC
1.67
Ω
GAL
© by SEMIKRON
Rev. 12 – 16.12.2009
1