SEMIX604GB126HDS_08 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SEMiX604GB126HDs
SEMiX^®4s
Trench IGBT Modules
SEMiX604GB126HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T_C=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 150°C
T_c = 25°C
T_c = 80°C
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 600V
V_GE ≤ 20V
T_j = 125°C
V_CES ≤ 1200V
Inverse diode
I_F
T_j = 150°C
T_c = 25°C
T_c = 80°C
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10ms, half sine wave, T_j = 25°C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 60s
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_Cnom = 400A
V_GE = 15V
chiplevel
T_j = 25°C
T_j = 125°C
T_j = 25°C
V_GE = 15V
T_j = 125°C
T_j = 25°C
T_j = 125°C
V_GE=V_CE, I_C = 16mA
V_GE = 0V
V_CE = 1200V
T_j = 25°C
T_j = 125°C
V_CE = 25V
V_GE = 0V
f = 1MHz
f = 1MHz
f = 1MHz
V_GE = - 8 V...+ 15 V
T_j = 25°C
V_CC = 600V
I_Cnom = 400A
T_j = 125°C
R_{G on} = 2.2Ω
R_{G off} = 2.2Ω
per IGBT
Values
1200
590
413
800
-20 ... 20
10
-40 ... 150
533
367
800
2500
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
V
µs
°C
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.7
2.1
V
2.00
2.45
V
1
1.2
V
0.9
1.1
V
1.8
2.3
mΩ
2.8
3.4
mΩ
5
5.8
6.5
V
0.12
0.36 mA
mA
28.8
nF
1.51
nF
1.31
nF
3200
nC
1.88
Ω
330
ns
70
ns
36
mJ
630
ns
130
ns
60
mJ
0.065 K/W
GB
© by SEMIKRON
03.04.2008
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