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SEMIX452GAL126HDS_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX452GB126HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX452GB126HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperatur limited to TC=125°C
max.
⢠Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ⤠20 V
VCES ⤠1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
VGE = ±15 V
RG on = 2 ï
RG off = 2 ï
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200
455
319
300
600
-20 ... 20
10
-40 ... 150
394
272
300
600
1900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.7
2.0
1
0.9
2.3
3.7
5.8
0.1
21.5
1.13
0.98
2400
2.50
280
65
35
630
130
45
max. Unit
2.1
V
2.45
V
1.2
V
1.1
V
3.0
mï
4.5
mï
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ï
ns
ns
mJ
ns
ns
mJ
0.083 K/W
GB
© by SEMIKRON
Rev. 1 â 23.03.2011
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