SEMIX303GB12E4S Datasheet, PDF (1/6 Pages) Semikron International – Trench IGBT Modules

SEMiX303GB12E4s
SEMiX^® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 800 V
V_GE ≤ 20 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_FRM = 3xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 100 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 11.4 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 300 A
T_j = 150 °C
T_j = 150 °C
R_{G on} = 1.8 Ω
R_{G off} = 1.8 Ω
T_j = 150 °C
T_j = 150 °C
di/dt_on = 5250 A/µs ^Tj ^{= 150 °C}
di/dt_off = 2825 A/µs _{Tj = 150 °C}
per IGBT
Values
1200
466
359
300
900
-20 ... 20
10
-40 ... 175
338
252
300
900
1485
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.8
2.05
V
2.2
2.4
V
0.8
0.9
V
0.7
0.8
V
3.3
3.8
mΩ
5.0
5.3
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
18.5
nF
1.22
nF
1.03
nF
1695
nC
2.50
Ω
255
ns
57
ns
30
mJ
565
ns
98
ns
41.2
mJ
0.095 K/W
GB
© by SEMIKRON
Rev. 4 – 16.12.2009
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