SEMIX302GB126HDS_10 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SEMiX302GB126HDs
SEMiX^® 2s
Trench IGBT Modules
SEMiX302GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T_C=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 600 V
V_GE ≤ 20 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
I_C = 200 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE = 15 V
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 8 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 125 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 200 A
T_j = 125 °C
T_j = 125 °C
R_{G on} = 2.8 Ω
R_{G off} = 2.8 Ω
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Values
1200
311
218
200
400
-20 ... 20
10
-40 ... 150
292
202
200
400
1300
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.7
2.1
V
2
2.45
V
1
1.2
V
0.9
1.1
V
3.5
4.5
mΩ
5.5
6.8
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
14.4
nF
0.75
nF
0.65
nF
1600
nC
3.75
Ω
320
ns
50
ns
30
mJ
600
ns
100
ns
26
mJ
0.12 K/W
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
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