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SEMIX251GD126HDS_08 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX251GD126HDs
SEMiX®13
Trench IGBT Modules
SEMiX251GD126HDs
Preliminary Data
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperatur limited to TC=125°C
max.
⢠Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ⤠20 V
Tj = 125 °C
VCES ⤠1200 V
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(j-s)
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 150 A
Tj = 125 °C
RG on = 1 â¦
RG off = 1 â¦
per IGBT
per IGBT
GD
© by SEMIKRON
Rev. 0 â 02.12.2008
Values
1200
242
170
150
300
-20 ... 20
10
-40 ... 150
207
143
150
300
1000
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.7
2.1
V
2.00
2.45
V
1
1.2
V
0.9
1.1
V
4.7
6.0
mâ¦
7.3
9.0
mâ¦
5
5.8
6.5
V
0.1
0.3
mA
mA
10.8
nF
0.56
nF
0.49
nF
1200
nC
5.00
â¦
250
ns
45
ns
19
mJ
525
ns
100
ns
22
mJ
0.15 K/W
K/W
1
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