SEMIX241DH16S Datasheet, PDF (1/4 Pages) Semikron International – Bridge Rectifier Module(halfcontrolled)

SEMiX241DH16s
SEMiX^® 13
Bridge Rectifier Module
(halfcontrolled)
SEMiX241DH16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Absolute Maximum Ratings
Symbol Conditions
Chip
I_T(AV)
sinus 180°
I_TSM
10 ms
i²t
10 ms
V_RSM
V_RRM
V_DRM
(di/dt)_cr
(dv/dt)_cr
T_j
Module
T_stg
V_isol
T_j = 130 °C
T_j = 130 °C
AC sinus 50Hz
T_c = 85 °C
T_c = 100 °C
T_j = 25 °C
T_j = 130 °C
T_j = 25 °C
T_j = 130 °C
1 min
1s
Characteristics
Symbol Conditions
Chip
V_T
V_T(TO)
r_T
I_DD;I_RD
t_gd
t_gr
t_q
I_H
I_L
V_GT
I_GT
V_GD
I_GD
R_th(j-c)
R_th(j-c)
R_th(j-c)
T_j = 25 °C, I_T = 300 A
T_j = 130 °C
T_j = 130 °C
T_j = 130 °C, V_DD = V_DRM; V_RD = V_RRM
T_j = 25 °C, I_G = 1 A, di_G/dt = 1 A/µs
V_D = 0.67 * V_DRM
T_j = 130 °C
T_j = 25 °C
T_j = 25 °C, R_G = 33 Ω
T_j = 25 °C, d.c.
T_j = 25 °C, d.c.
T_j = 130 °C, d.c.
T_j = 130 °C, d.c.
per thyristor
per module
sin. 180°
per thyristor
per module
per thyristor
per module
Module
R_th(c-s)
M_s
M_t
a
w
per chip
per module
to heat sink (M5)
to terminals (M6)
Values
240
200
2250
1900
25300
18000
1700
1600
1600
100
1000
-40 ... 130
-40 ... 125
4000
4800
Unit
A
A
A
A
A²s
A²s
V
V
V
A/µs
V/µs
°C
°C
V
V
min.
3
150
3
2.5
typ. max. Unit
1.9
V
0.85
V
4
mΩ
24
mA
1
µs
2
µs
150
µs
150
250
mA
300
600
mA
V
mA
0.25
V
6
mA
K/W
K/W
0.32 K/W
0.32 K/W
K/W
K/W
K/W
0.04
K/W
5
Nm
5
Nm
5 * 9,81 m/s²
350
g
DH
© by SEMIKRON
Rev. 29 – 05.03.2010
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