|
SEMIX223GD12VC Datasheet, PDF (1/5 Pages) Semikron International – High short circuit capability | |||
|
SEMiX223GD12Vc
SEMiX® 33c
SEMiX223GD12Vc
Features
⢠Homogeneous Si
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 2,9 ï
RGoff,main = 2,9 ï
RG,X = 2,2 ï
RE,X = 0,5 ï
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 600 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 225 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 225 A
VGE = ±15 V
RG on = 3.8 ï
RG off = 3.8 ï
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3200 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs
du/dtoff = 6600 V/ Tj = 150 °C
µs
per IGBT
Values
1200
323
246
225
675
-20 ... 20
10
-40 ... 175
263
197
225
675
1161
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.5
typ.
1.85
2.3
0.94
0.88
4.0
6.1
6
0.1
13.5
1.33
1.33
2460
3.33
470
72
19.9
665
109
27.2
max. Unit
2.3
V
2.55
V
1.04
V
0.98
V
5.6
mï
7.0
mï
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ï
ns
ns
mJ
ns
ns
mJ
0.14 K/W
GD
© by SEMIKRON
Rev. 2 â 16.02.2011
1
|
▷ |