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SEMIX223GD12E4C Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX223GD12E4c
SEMiX® 33c
Trench IGBT Modules
SEMiX223GD12E4c
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠20 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 225 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.5 â¦
RG off = 1.5 â¦
Tj = 150 °C
Tj = 150 °C
di/dton = 3630 A/µs Tj = 150 °C
di/dtoff = 2235 A/µs Tj = 150 °C
per IGBT
Values
1200
333
256
225
675
-20 ... 20
10
-40 ... 175
270
202
225
675
1161
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.1
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
4.7
5.3
mâ¦
6.9
7.3
mâ¦
5
5.8
6.5
V
0.1
0.3
mA
mA
13.2
nF
0.87
nF
0.71
nF
1275
nC
3.33
â¦
213
ns
60
ns
22
mJ
535
ns
113
ns
31.4
mJ
0.135 K/W
GD
© by SEMIKRON
Rev. 2 â 16.12.2009
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