SEMIX223GB12VS Datasheet, PDF (1/5 Pages) Semikron International – High short circuit capability

SEMiX223GB12Vs
SEMiX^® 3s
SEMiX223GB12Vs
Features
• Homogeneous Si
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• Dynamic values apply to the
following combination of resistors:
R_Gon,main = 2,9 
R_Goff,main = 2,9 
R_G,X = 2,2 
R_E,X = 0,5 
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 600 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal = 80 °C
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 225 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 9 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
T_j = 150 °C
I_C = 225 A
V_GE = ±15 V
R_{G on} = 3.8 
R_{G off} = 3.8 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 3200 A/µs T_j = 150 °C
di/dt_off = 2000 A/µs
du/dt_off = 6600 V/ T_j = 150 °C
µs
per IGBT
Values
1200
323
246
225
675
-20 ... 20
10
-40 ... 175
263
197
225
675
1161
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.5
typ.
1.85
2.3
0.94
0.88
4.0
6.1
6
0.1
13.5
1.33
1.33
2460
3.33
470
72
19.9
665
109
27.2
max. Unit
2.3
V
2.55
V
1.04
V
0.98
V
5.6
m
7.0
m
6.5
V
0.3
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.14 K/W
GB
© by SEMIKRON
Rev. 2 – 16.02.2011
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