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SEMIX151GD066HDS_10 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX151GD066HDs
SEMiX® 13
Trench IGBT Modules
SEMiX151GD066HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠Matrix Converter
⢠Resonant Inverter
⢠Current Source Inverter
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠For short circuit: Soft RGoff
recommended
⢠Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 360 V
VGE ⤠15 V
VCES ⤠600 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 2.4 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 150 A
Tj = 150 °C
Tj = 150 °C
RG on = 4.5 â¦
RG off = 4.5 â¦
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
per IGBT
Values
600
200
151
150
300
-20 ... 20
6
-40 ... 175
219
161
150
300
980
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.85
V
1.7
2.1
V
0.9
1
V
0.85
0.9
V
3.7
5.7
mâ¦
5.7
8.0
mâ¦
5
5.8
6.5
V
0.15
0.45 mA
mA
9.2
nF
0.58
nF
0.27
nF
1200
nC
2.00
â¦
140
ns
40
ns
3.8
mJ
385
ns
40
ns
6.1
mJ
0.29 K/W
GD
© by SEMIKRON
Rev. 0 â 16.04.2010
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