SEMIX141KT16S Datasheet, PDF (1/4 Pages) Semikron International – Rectifier Thyr./Diode Module

SEMiX141KT16s
SEMiX^®1s
Rectifier Thyr./Diode Module
SEMiX141KT16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications
• Input Bridge Rectifier for
• AC/DC motor control
• power supply
Absolute Maximum Ratings
Symbol Conditions
Chip
I_T(AV)
sinus 180°
I_TSM
10 ms
i²t
10 ms
V_RSM
V_RRM
V_DRM
(di/dt)_cr
(dv/dt)_cr
T_j
Module
T_stg
V_isol
T_j = 130 °C
T_j = 130 °C
AC sinus 50Hz
T_c = 85 °C
T_c = 100 °C
T_j = 25 °C
T_j = 130 °C
T_j = 25 °C
T_j = 130 °C
1 min
1s
Characteristics
Symbol Conditions
Values
130
98
3600
3000
57800
45000
1700
1600
1600
200
1000
-40 ... 130
-40 ... 125
4000
4800
Unit
A
A
A
A
A²s
A²s
V
V
V
A/µs
V/µs
°C
°C
V
V
min.
typ.
max. Unit
V_T
V_T(TO)
r_T
T_j = 25 °C, I_T = 360 A
T_j = 130 °C
T_j = 130 °C
I_DD;I_RD
t_gd
T_j = 130 °C, V_DD = V_DRM; V_RD = V_RRM
T_j = 25 °C, I_G = 1 A, di_G/dt = 1 A/µs
t_gr
V_D = 0.67 * V_DRM
t_q
T_j = 130 °C
I_H
T_j = 25 °C
I_L
T_j = 25 °C, R_G = 33 Ω
V_GT
T_j = 25 °C, d.c.
2
I_GT
T_j = 25 °C, d.c.
150
V_GD
T_j = 130 °C, d.c.
I_GD
T_j = 130 °C, d.c.
10
R_th(j-c)
per thyristor
per diode
R_th(j-c)
sin. 180°
per thyristor
per diode
R_th(j-c)
per thyristor
per diode
Module
R_th(c-s)
per module
M_s
to heat sink (M5)
3
M_t
to terminals (M6)
2.5
a
w
1.6
V
0.85
V
2.5
mΩ
60
mA
1
µs
2
µs
150
µs
100
300
mA
200
500
mA
V
mA
0.25
V
mA
0.2
K/W
K/W
0.21 K/W
K/W
K/W
K/W
K/W
0.075 K/W
5
Nm
5
Nm
5 * 9,81 m/s²
145
g
KT
© by SEMIKRON
Rev. 0 – 15.09.2008
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