SBH3020 Datasheet, PDF (1/3 Pages) Semikron International – High temperature schottky barrier diodes

SBH 3020 ... SBH 3060
Type
Repetitive
peak
reverse
voltage
Surge peak
reverse
voltage
Max.
reverse
recovery
time
Max.
forward
voltage
Max.
forward
voltage
Axial Lead Diode
High temperature schottky
barrier diodes
Forward Current: 30 A
Reverse Voltage: 20 to 60 V
SBH 3020 ... SBH 3060
Preliminary Data
Features
• Max. solder temperature: 260°C
• Plastic material has UL
classification 94V-0
Typical Applications*
• Designed as Bypass Diodes for Solar
Panels
• Protection application
Mechanical Data
• Plastic case: 8 x 7,5 [mm]
• Weight approx.: 2,4 g
• Terminals: plated terminals solderable
per MIL-STD-750
• Mounting position: any
• Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Footnotes
1) _{IF = - A, IR = - A, IRR = - A}
2) _{IF = 5 A, Tj = 25 °C}
3) _{IF = 30 A, Tj = 25 °C}
4) _{Valid, if leads are kept at TA at a distance}
of 0 mm from case
5) _{Max. junction temperature Tj ≤175 °C in}
reverse mode (V_R = 80% V_RRM) in reverse
mode, T_j≤ 200 °C in bypass mode
6) _{Thermal resistance from junction to lead/}
terminal at distance 0 mm from case
VV_RRM
VV_RSM
tn_rrs¹⁾
VV_F2)
VV_F3)
SBH 3020 20
20
-
0,43
0,6
SBH 3030 30
30
-
0,43
0,6
SBH 3040 40
40
-
0,43
0,6
SBH 3045 45
45
-
0,43
0,6
SBH 3050 50
50
-
0,53
0,7
SBH 3060 60
60
-
0,53
0,7
Absolute Maximum Ratings
Symbol Conditions
Ta = 25 °C, unless otherwise specified
I_FAV
R-load, ⁴⁾, T_a = 50 °C
I_FRM
f > 15 Hz, ⁴⁾
I_FSM
half sinus-wave ^tp ^{= 10 ms}
T_a = 25 °C
t_p = 8.3 ms
i²t
T_a = 25 °C
t_p = 10 ms
t_p = 8.3 ms
T_j
Operating junction temperature
T_j
DC forward (bypass) mode ⁵⁾
T_stg
Storage temperature
Values
30
90
700
2450
-50 ... +175
-50 ... +200
-50 ... +175
Unit
A
A
A
A
A²s
A²s
°C
°C
°C
Characteristics
Symbol Conditions
min.
typ.
max. Unit
Ta = 25 °C, unless otherwise specified
I_R
T_j = 25 °C, V_R = V_RRM
I_R
T_j = 100 °C, V_R = V_RRM
C_j
at 1 MHz and applied reverse voltage
of 4 V
E_RSM
L = 60 mH, T_j = 25 °C, inductive load
switched off
R_th(j-a)
4)
R_th(j-L)
6)
150
µA
mA
-
pF
-
mJ
-
K/W
2.5
K/W
Diode
© by SEMIKRON
Rev. 2 – 06.05.2011
1