SB1520TL Datasheet, PDF (1/3 Pages) Semikron International – Schottky barrier rectifier diodes

SB1520TL..SB15100TL
Type
Repetitive
peak
reverse
voltage
Surge peak
reverse
voltage
Max.
reverse
recovery
time
Max.
forward
voltage
Max.
forward
voltage
Axial Lead Diode
Schottky barrier rectifier
diodes
Forward Current: 15 A
Reverse Voltage: 20 to 100 V
SB1520TL..SB15100TL
Features
• Max. solder temperature: 260°C
• Plastic material has UL
classification 94V-0
• Electrostatic discharge immunity
test IEC 1000-4-2 (C=150 pF, R=150
Ohm): voltage class 20 kV
Typical Applications*
• Designed as Bypass Diodes for Solar
Panels, protection application
Mechanical Data
• Plastic case: 8 x 7,5 [mm]
• Weight approx.: 2 g
• Terminals: plated terminals solderable
per MIL-STD-750
• Mounting position: any
• Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Footnotes
1) _{IF = - A, IR = - A, IRR = - A}
2) _{IF = 5 A, Tj = 25 °C}
3) _{IF = 15 A, Tj = 25 °C}
4) _{Valid, if leads are kept at TA at a distance}
of 0 mm from case
5) _{Max. junction temperature Tj ≤200 °C in}
bypass mode / DC forward mode
6) _{Thermal resistance from junction to lead/}
terminal at distance 0 mm from case
VV_RRM
VV_RSM
tn_rrs¹⁾
VV_F2)
VV_F3)
SB 1520TL 20
20
-
0,43
0,52
SB 1530TL 30
30
-
0,43
0,52
SB 1540TL 40
40
-
0,43
0,52
SB 1545TL 45
45
-
0,43
0,52
SB 1550TL 50
50
-
0,6
-
SB 1560TL 60
60
-
0,6
-
SB 1590TL 90
90
-
0,74
-
SB 15100TL 100
100
-
0,74
-
Absolute Maximum Ratings
Symbol Conditions
Ta = 25 °C, unless otherwise specified
I_FAV
R-load, ⁴⁾, T_a = 50 °C
I_FRM
f > 15 Hz, ⁴⁾
I_FSM
half sinus-wave ^tp ^{= 10 ms}
T_a = 25 °C
t_p = 8.3 ms
i²t
T_a = 25 °C
t_p = 10 ms
t_p = 8.3 ms
T_j
Operating junction temperature
T_j
DC forward (bypass) mode ⁵⁾
T_stg
Storage temperature
Values
15
60
350
613
-50 ... +150
-50 ... +200
-50 ... +175
Unit
A
A
A
A
A²s
A²s
°C
°C
°C
Characteristics
Symbol Conditions
min.
typ.
max. Unit
Ta = 25 °C, unless otherwise specified
I_R
T_j = 25 °C, V_R = V_RRM
I_R
T_j = 100 °C, V_R = V_RRM
C_j
at 1 MHz and applied reverse voltage
of 4 V
E_RSM
L = 60 mH, T_j = 25 °C, inductive load
switched off
R_thja
4)
R_thjL
6)
500
µA
25
mA
-
pF
-
mJ
-
K/W
1.8
K/W
Diode
© by SEMIKRON
Rev. 2 – 21.01.2011
1