453GB17E4IP Datasheet, PDF (1/5 Pages) Semikron International – SEMiX® 3p shunt

SEMiX453GB17E4Ip
SEMiX^® 3p shunt
SEMiX453GB17E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
T_j=150°C
• V_isol between temperature sensor and
power section is only 2500V
GB + shunt
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 1000 V
V_GE ≤ 15 V
V_CES ≤ 1700 V
T_j = 150 °C
Inverse diode
V_RRM
I_F
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
R_th(c-s)
R_th(c-s)
I_C = 450 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 18 mA
V_GE = 0 V
V_CE = 1700 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 900 V
T_j = 150 °C
I_C = 450 A
V_GE = +15/-15 V
R_{G on} = 2.7 Ω
R_{G off} = 2.7 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 4300 A/µs T_j = 150 °C
di/dt_off = 2200 A/µs
du/dt = 3200 V/µs _{Tj = 150 °C}
L_s = 21 nH
per IGBT
per IGBT (λ_grease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Values
1700
731
555
450
1350
-20 ... 20
10
-40 ... 175
1700
557
412
450
900
2565
-40 ... 175
210
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
1.90
2.26
1.1
1
1.78
2.8
5.8
36
1.50
1.14
3600
1.67
270
90
153
815
200
150
0.029
0.02
max. Unit
2.20
V
2.45
V
1.2
V
1.1
V
2.2
mΩ
3
mΩ
6.4
V
5
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.06 K/W
K/W
K/W
Rev. 6.0 – 24.06.2015
1