25NABI066V3 Datasheet, PDF (1/6 Pages) Semikron International – Three-phase bridge rectifier

SKiiP 25NABI066V3
MiniSKiiP^® CIB IPM
Three-phase bridge rectifier + brake
chopper + three-phase inverter
intelligent power module
SKiiP 25NABI066V3
Data sheet status: Preliminary
Features
• One screw assembly of driver,
module and heat sink
• Solder-free assembly of power,
control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes
in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all
channels
• Overcurrent shut-down via current
sensing
• Interlock logic for shoot-through
prevention
• Common shut-down signal
• Undervoltage lockout for all channels
with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
Typical Applications
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner
Remarks
Absolute Maximum Ratings (T_s=25°C, unless otherwise specified)
Symbol Parameter
IGBT - Inverter, Chopper
V_CES
I_C
T_j = 175 °C
I_Cnom
I_CRM
t_psc
I_CRM = 2xI_Cnom
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 600 V
T_j(max)
Diode - Inverter, Chopper
I_F
T_j = 175 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T _j = 25 °C
T_j(max)
Diode - Rectifier
V_RRM
I_F
I_FSM
T_j(max)
Driver - Inverter, Chopper
VCC
Applied between VCC-VSS, VCCL-VSSL
VBx
Applied between VB1-U, VB2-V, VB3-W
VSx
Voltage to VSS, t_p<500ns
V_in
Applied between HIN1, LIN1, HIN2, LIN2, HIN3, LIN3,
LIN4, /ERRIN - VSS
V_oErr
Applied between /ERROUT-VSS
I_max(EO)
Between /ERROUT-VSS
V_ITRIP
Applied between ITRIP-VSS
f_max
Temperature
T_c
T_stg
System
V_CC
Applied between P-NU, NV, NW
V_CC(s)
Applied between P-NU, NV, NW
V_isol
AC, rms, f=60Hz, t=1min, all pins to heat sink
P_tot
Per IGBT @ T_s=25°C
I_tRMS
Per power terminal (20A / Spring)
Conditions
T_s= 25 °C
T_s= 70 °C
V_DC=360V, V_GE=15V, Tj=150°C
T_s = 25 °C
T_s = 70 °C
T_j = 25°C
T_s= 70°C, T _j = 150°C
T_j = 25 °C, 10ms, half sine wave
Electrical Characteristics (T_s=25°C, unless otherwise specified)
Symbol Parameter
IGBT - Inverter, Chopper
V_CEsat
I_C = 30 A
V_GE = 15 V
V_CEO
r_CE
VGE = 15 V
I_CES
V_GE = 0 V
V_CE = 600 V
E_on
V_DC=300VT_j = 150 °C
E_off
I_C=30A
t_d(on)
R_{G on} / R_{G off} = 4.7 Ω
t_r
di/dt_on = 815 A/µs
t_d(off)
di/dt_off = 997 A/µs
t_f
R_th(j-s)I
per IGBT
Diode - Inverter, Chopper
V_F = V_EC
I_F = 30 A
V_GE = 0 V (Chiplevel)
V_F0
r_F
E_rr
Qrr
IRRM
R_th(j-s)D
I_F = 30A
di_F/dt = - 1730 A/µs
V_CC = 300V, V_GE = 0 V
per diode
Conditions
T_j = 25°C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T _j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
Values
600
42
34
30
60
≤6
Units
V
A
A
A
A
µs
-40 ... +175
°C
42
A
34
A
30
A
60
A
A
-40 ... +175
°C
800
V
46
A
370
A
-40 ... +150
°C
17
V
17
V
-3 … 600
V
VSS-0.3 … VCC+0.3
V
VSS-0.3 … VCC+0.3
V
10
mA
VSS-0.3 … VCC+0.3
V
20
kHz
-40 ... +125
°C
-40 ... +125
°C
400
V
≥400
V
2500
V
140
W
20
A
Limits
min. typ. max. Units
1.45
1.85
V
1.65
2.05
V
0.9
1.0
V
0.85
0.9
V
18
28
mΩ
27
38
mΩ
1
mA
1.3
mJ
1.0
mJ
990
ns
65
ns
1645
ns
170
ns
1.4
K/W
1.5
1.7
V
1.5
1.7
V
1.0
V
0.9
V
17
mΩ
20
mΩ
0.6
mJ
µC
38
A
1.8
K/W
NABI
1/6
09.08.2010
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