25ACI12T4V2 Datasheet, PDF (1/6 Pages) Semikron International – Three-phase inverter intelligent

SKiiP 25ACI12T4V2
MiniSKiiP^® AC IPM
Three-phase inverter intelligent
power module
SKiiP 25ACI12T4V2
Data sheet status: preliminary
Features
• One screw assembly of driver,
module and heat sink
• Solder-free assembly of power,
control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes
in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all
channels
• Overcurrent shut-down via current
sensing
• Interlock logic for shoot-through
prevention
• Common shut-down signal
• Undervoltage lockout for all channels
with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
Typical Applications
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner
Remarks
Absolute Maximum Ratings (T_s=25°C, unless otherwise specified)
Symbol Parameter
Conditions
IGBT - Inverter
V_CES
I_C
T_j = 175 °C
T_S = 25 °C
T_S = 70 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
t_psc
V_CC = 600V
T_j=150°C
T_j(max)
Junction temperature
Diode
I_F
T_j=175°C
T_s= 25 °C
I_Fnom
I_FRM
I_FSM
I_FRM = 3xI_Cnom
t_p = 10 ms, sin 180°, T _j = 150 °C
T_j(max)
Junction temperature
Driver
VCC
Applied between VCC-VSS, VCCL-VSSL
VBx
Applied between VB1-U, VB2-V, VB3-W
VSx
V_in
Voltage to VSS, t_p<500ns
Applied between HIN1, LIN1, HIN2, LIN2, HIN3,
LIN3 - VSS
V_oErr
Applied between /ERROUT-VSS
I_max(EO)
Between /ERROUT-VSS
V_ITRIP
f_max
Applied between ITRIP-VSS
Temperature
T_c
T_stg
System
V_isol
I_tRMS
T_s= 70 °C
T_j < T_j(max)
AC, rms, f=60Hz, t=1min, all pins to heat sink
Per power terminal (20A / Spring)
Electrical Characteristics (T_s=25°C, unless otherwise specified)
Symbol Parameter
Conditions
IGBT
V_CEsat
I_C = 50 A
T_j = 25 °C
V_GE = 15 V
T_j = 150 °C
V_CEO
T_j = 25 °C
r_CE
V_GE = 15 V
T_j = 150 °C
T_j = 25 °C
I_CES
V_GE = 0 V
V_CE = 600 V
T_j = 150 °C
T_j = 25 °C
E_on
V_CC = 600V
T_j = 150 °C
E_off
t_d(on)
t_r
I_c = 50 A
R_gon/R_goff = 4.7 Ω
di/dt_on = 1061 A/µs
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
t_d(off)
di/dt_off = 693 A/µs
T_j = 150 °C
t_r
T_j = 150 °C
R_th(j-s)
per IGBT
Diode
V_F = V_EC
V_F0
I_F = 50 A
V_GE = 0 V (Chiplevel)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
r_F
T_j = 25 °C
E_rr
I_F = 50 A
T_j = 150 °C
T_j = 150 °C
Q_rr
di_F/dt = -1479 A/µs
T_j = 150 °C
I_RRM
V_cc = 600 V, V_GE = 0 V
T_j = 150 °C
R_th(j-s)
per Diode
Values
1200
61
50
50
150
≤10
-40 ... +175
Units
V
A
A
A
A
µs
°C
57
A
45
A
50
A
150
A
265
A
-40 … +175
°C
17
V
17
V
-3 … 1200
V
VSS-0.3 … VCC+0.3
VSS-0.3 … VCC+0.3
V
10
mA
VSS-0.3 … VCC+0.3
V
20
kHz
-40 … +125
°C
-40 … +125
°C
2500
V
20
A
Limits
min. typ. max. Units
1.85
2.05
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
21
23
mΩ
31
33
mΩ
0.3
mA
7.2
mJ
5.6
mJ
1065
ns
50
ns
1670
ns
252
ns
0.84
K/W
2.25
2.55
V
2.2
2.5
V
1.3
1.5
V
0.9
1.1
V
19
21
mΩ
26
28
mΩ
3
mJ
8.3
µC
56
A
0,99
K/W
ACI
Page 1 / 6
09.08.2010
© by SEMIKRON