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| HFC1N60 Datasheet, PDF (5/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Note :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
101
Operation in This Area
is Limited by R DS(on)
100
100 µs
1 ms
DC 10 ms
10-1
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Note :
1. VGS = 10 V
2. ID = 0.7 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
TC, Case Temperature [ â]
Figure 10. Maximum Drain Current
vs Case Temperature
101 D=0.5
0.2
0.1
100 0.05
0.02
0.01
10-1
single pulse
â» Notes :
1. Zθ JC(t) = 17 â/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
t1
t2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
102
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Sep 2006
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