 English |
|
|
|
|
|
|
|
| HRP120N10K Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET | |||
| |||
| ◁ |
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
â Note :
1. VGS = 0 V
2. ID = 250µA
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R
DS(on)
102
100 µs
1 ms
10 ms
101
DC
100
* Notes :
10-1
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. VGS = 10 V
2. I = 40 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
80
60
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
* Notes :
1. ZθJC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TC = PDM * ZθJC(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,December 2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese