HFP630 Datasheet, PDF (4/8 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET

Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
10⁰
D =0.5
0 .2
1 0 ^-1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 ^-2
1 0 ^-5
※ N otes :
1 . Z _{θ JC}( t ) = 1 .7 4 ℃ / W M a x .
2 . D uty F actor, D = t₁/t₂
3 . T _{J M} - T _C = P _{D M} * Z _{θ J C}( t )
sin g le p u lse
P_DM
t₁
t₂
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,July 2005