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| HFD5N50S Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET | |||
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Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
10 µs
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. VGS = 10 V
2. I = 2.0 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
* Notes :
1. ZθJC(t) = 2.6 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
PDM
10-1
t1
t2
100
101
t , Square Wave Pulse Duration [sec]
1
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,OCT 2009
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