HTP4A60S Datasheet, PDF (3/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220 PACKAGE)

Typical Characteristics
5
180^o
4
150^o
120^o
3
90^o
2
1
60^o
30^o
0
0
1
2
3
4
5
R.M.S. on state current, I [A]
T(RMS)
Fig 1. R.M.S. current vs. Power dissipation
130
125
30^o
60^o
120
90^o
115
120^o
110
150^o
180^o
105
100
0
1
2
3
4
5
R.M.S. on state current, I_T(RMS) [A]
Fig 2. R.M.S. current vs. Case temperature
10¹
25[^oC]
I⁺GT3
10⁰
25[^oC]
I⁺GT1
I^-GT1
I^-GT3
P_GM(2W)
P_G(AV)(0.2W)
V_GD
10^-1
10⁰
10¹
10²
10³
10⁴
Gate current, I_G [mA]
Fig 3. Gate power characteristics
2.5
2.0
1.5
I⁺GT1
I^-GT1
1.0
I^-GT3
0.5
I⁺GT3
0.0
-50 -25
0
25
50
75 100 125 150
Junction Temperature, T_J[^oC]
Fig 5. Gate trigger current vs.
junction temperature
40
35
30
25
60Hz
20
50Hz
15
10
5
0
10⁰
10¹
10²
Time[cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
2.5
2.0
1.5
V⁺GT1
V^-GT1
V⁺GT3
1.0
V^-GT3
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Junction temperature, T [oC]
J
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013