HRP370N10K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET

Typical Characteristics
10²
V
GS
Top : 15 V
10 V
8V
7V
6V
5.5 V
5V
Bottom : 4.5 V
10¹
10⁰
* Notes :
1. 300us Pulse Test
2. T = 25^oC
C
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
120
V_GS = 10V
90
60
30
∗ Note : T_J = 25^oC
0
0
15
30
45
60
75
90
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
C_iss = C_gs + C_gd (C_ds = shorted)
C_iss
C_oss = C_ds + C_gd
C =C
rss gd
2000
1500
1000
500
0
10^-1
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
C_oss
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175^oC
1
25^oC
* Notes :
1. V_DS= 20V
2. 300us Pulse Test
0.1
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10
1
175^oC 25^oC
0.1
0.0
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 80V
DS
I_D = 12A
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Jan 2015