HRLP33N03K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 10 V
8V
7V
6V
5V
10²
4V
Bottom : 3 V
* Notes :
1. 300us Pulse Test
10¹
2. T_C = 25^oC
10⁰
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
6
4
V_GS = 4.5V
2
V_GS = 10V
∗ Note : T_J = 25^oC
0
0
50
100
150
200
250
300
350
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C_iss
C_oss = C_ds + C_gd
C =C
rss gd
4000
3000
2000
1000
* Note ;
C_oss
1. V_GS = 0 V
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175^oC
1
25^oC
* Notes :
1. V_DS= 15V
2. 300us Pulse Test
0.1
0
1
2
3
4
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 24V
DS
I_D = 30A
0
0
30
60
90
120
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Jan 2015