HRLFS55N03K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested

Typical Characteristics
200
160
V_GS
Top : 10 V
8V
7V
6V
5V
4V
3.5 V
3.0 V
Bottom : 2.5 V
120
80
40
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
10
V_GS = 4.5V
8
6
V_GS = 10V
4
2
Note : T_J = 25^oC
0
0
40
80
120
160
200
240
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
C_iss
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
1500
1000
500
C_rss
0
0
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
C_oss
5
10
15
20
25
30
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
200 _TJ=25oC
160
120
80
40
* Notes :
1. V = 5V
DS
2. 300us Pulse Test
0
0
1
2
3
4
5
6
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
125^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 24V
I_D = 20A
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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