HRLD125N06K Datasheet, PDF (3/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V
GS
Top : 10 V
8V
10²
7V
6V
5V
4V
Bottom : 3 V
* Notes :
10¹
1. 300us Pulse Test
2. T_C = 25^oC
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
30
25
20
15
V_GS = 4.5V
10
V = 10V
GS
∗ Note : T_J = 25^oC
5
0
40
80
120
160
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
C_iss
2000
1000
0
10^-1
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
C_oss
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175^oC
25^oC
1
* Notes :
1. V_DS= 15V
2. 300us Pulse Test
0.1
0
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 48V
DS
I_D = 15A
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,December 2014