HRD50N06K Datasheet, PDF (3/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V
GS
10^{2 Top :}
15 V
10 V
8V
7V
6V
5.5 V
5V
Bottom : 4.5 V
10¹
* Notes :
1. 300us Pulse Test
2. T = 25^oC
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
20
V_GS = 10V
16
12
∗ Note : T_J = 25^oC
8
0
20
40
60
80
100
120
140
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_iss
C =C
rss gd
1500
1000
500
0
10^-1
* Note ;
1.
V
GS
=
0
V
C_oss
2. f = 1 MHz
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10 175^oC
25^oC
1
* Notes :
1. V = 20V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 48V
DS
I_D = 15A
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A2,December 2014