HRA56N08K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V
GS
Top : 15 V
10 V
8V
7V
10²
6V
5.5 V
5V
Bottom : 4.5 V
* Notes :
10¹
1. 300us Pulse Test
2. T_C = 25^oC
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
5.5
V_GS = 10V
5.0
4.5
∗ Note : T_J = 25^oC
4.0
0
50
100
150
200
250
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C
C_rss = C_gd
iss
4000
3000
2000
1000
C_oss
* Note ;
1. V = 0 V
GS
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
100
10
175^oC
25^oC
1
* Notes :
1. V = 20V
DS
2. 300us Pulse Test
0.1
0
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
0.1
0.0
175^oC 25^oC
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 64V
I_D = 30V
0
0
20
40
60
80
100
120
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,December 2014