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HFS2N70S Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel MOSFET
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
VGS = 10V
9
6
VGS = 20V
3
* Note : T = 25oC
J
0
0
1
2
3
4
5
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
Ciss
300
Coss
200
* Note ;
1. VGS = 0 V
2. f = 1 MHz
100
Crss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 140V
10
VDS = 350V
VDS = 560V
8
6
4
2
* Note : ID = 1.6A
0
0
2
4
6
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2009