HFS2N60 Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
※ Note ;
1. V_GS = 0 V
C_rss
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 2.0 A
0
0 1 2 3 4 5 6 7 8 9 10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005