HFS11N40 Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 400V N-Channel MOSFET

Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
1200
C_oss
※ Note ;
600
C_rss
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 80V
10
V_DS = 200V
V_DS = 320V
8
6
4
2
※ Note : I = 11.4 A
D
0
0
8
16
24
32
40
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005