HFP7N80 Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET

Typical Characteristics
Top :
10¹
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25 ℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4.0
3.5
3.0
V_GS = 10V
2.5
V_GS = 20V
2.0
1.5
※ Note : T_J = 25 ℃
1.0
0
3
6
9
12
15
18
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
1000
500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
※ Notes :
1. V_DS = 50V
2. 250μ s Pulse Test
10^-1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150 ℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 160V
10
V_DS = 400V
V_DS = 640V
8
6
4
2
※ Note : I_D = 7.0A
0
0
5
10
15
20
25
30
35
40
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,June 2005