HFP5N50S Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
V_GS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 100V
V_DS = 250V
8
V_DS = 400V
6
4
2
∗
Note
:
I
D
=
5.0A
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Oct 2008