HFP10N60U Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
10¹
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.2
1.0
V_GS = 10V
0.8
0.6
V_GS = 20V
Note : T = 25oC
J
0.4
0
3
6
9
12
15
18
21
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
2000
1600
1200
C_iss
C_oss
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
800
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
400
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25^oC
150^oC
-55^oC
* Notes :
1. V_DS= 30V
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150^oC _25oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2
Note : I = 9.5A
D
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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