HFP10N60 Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_iss
C_rss = C_gd
C_oss
※ Note ;
C_rss
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2
※ Note : I_D = 9.5A
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2005