HFD2N65F Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Typical Characteristics
10¹
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10⁰
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
9
V_GS = 10V
6
3
V_GS = 20V
* Note : T_J = 25^oC
0
0
1
2
3
4
5
I_D, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
400
C
C_rss = C_gd
iss
300
C_oss
200
* Note ;
1. V_GS = 0 V
100
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
25^oC
1
150^oC
-25^oC
* Notes :
1. V_DS= 30V
2. 300us Pulse Test
0.1
2
3
4
5
6
7
8
9
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
150^oC _25oC
0.1
0.2
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 130V
V_DS = 325V
8
V_DS = 520V
6
4
2
* Note : I_D = 2.0A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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