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HCS65R380T Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss
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Typical Characteristics
Figure 1. On Region Characteristics
0.7
0.6
0.5
VGS = 10V
0.4
0.3
0.2
VGS = 20V
0.1
Note : TJ = 25oC
0.0
0
3
6
9
12
15
18
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
104
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
103
Ciss
102
Coss
101
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
100
0.1
1
10
VDS, Drain-Source Voltage [V]
Crss
100
Figure 5. Capacitance Characteristics
Figure 2. Transfer Characteristics
102
101
100
10-1
10-2
150oC
10-3
25oC
* Notes :
10-4
1. VGS= 0V
2. 300us Pulse Test
10-5
0.0
0.4
0.8
1.2
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10
VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 11A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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