HCP70R360S Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
10¹
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
10⁰
1. 300us Pulse Test
2. T_C = 25^oC
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.0
0.8
0.6
V_GS = 10V
0.4
V_GS = 20V
0.2
Note : T_J = 25^oC
0.0
0
4
8
12
16
20
24
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
4000
C_oss
3000
2000
1000
0
10^-1
* Note ;
1. V_GS = 0 V
C_iss
2. f = 1 MHz
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25^oC
150^oC
-25^oC
* Notes :
1. V_DS= 30V
2. 300us Pulse Test
0.1
2
V⁴_GS, Gate-Sour⁶ce Voltage [V]⁸
10
Figure 2. Transfer Characteristics
10
1
150^oC _25oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 140V
10
V_DS = 350V
V_DS = 560V
8
6
4
2
Note : I_D = 11A
0
0
5
10
15
20
25
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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