HCD70R950T Datasheet, PDF (3/9 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

Typical Characteristics
10
V
GS
Top : 15.0 V
10.0 V
8
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
6 _{Bottom : 4.5 V}
4
2
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
0
0
5
10
15
20
25
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3.5
3.0
2.5
V_GS = 10V
2.0
1.5
1.0
V_GS = 20V
0.5
Note : T = 25oC
J
0.0
0
3
6
9
12
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
10⁴
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
10³
C_iss
10²
C_oss
10¹
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
0.1
1
10
V_DS, Drain-Source Voltage [V]
C_rss
100
Figure 5. Capacitance Characteristics
10
-55^oC
8
25^oC
6
4
150^oC
2
* Notes :
1. V = 10V
DS
2. 300us Pulse Test
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10
1
150^oC _25oC
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 140V
10
V_DS = 350V
V_DS = 560V
8
6
4
2
Note : I_D = 4.5A
0
0
3
6
9
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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