HCD6NC70S Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 700V N-Channel Super Junction MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
2. T = 25^oC
C
10^-1
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
5
4
3
V_GS = 10V
2
1
V_GS = 20V
Note : T = 25oC
J
0
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
1200
800
400
0
10^-1
C_oss
* Note ;
1. V = 0 V
GS
C_iss
2. f = 1 MHz
C_rss
10⁰
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25^oC
150^oC
-25^oC
* Notes :
1. V = 20V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10
1
150^oC
25^oC
0.1
0.0
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 140V
V_DS = 350V
8
V_DS = 560V
6
4
2
Note : I_D = 1.5A
0
0
2
4
6
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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