TIP42 Datasheet, PDF (2/5 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

TIP42/42A/42B/42C
Medium Power Linear Switching Applications
- Complement to TIP41/41A/41B/41C
Absolute Maximum Ratings T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP42
V_CBO
-40
V
: TIP42A
-60
V
: TIP42B
-80
V
: TIP42C
-100
V
Collector-Emitter Voltage : TIP42
V_CEO
-40
V
: TIP42A
-60
V
: TIP42B
-80
V
: TIP42C
-100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V_EBO
I_C
I_CP
I_B
P_C
P_C
T_J
T_STG
-5
V
-6
A
-10
A
-2
A
2
W
65
W
150
℃
-65~150 ℃
Electrical Characteristics T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
Emitter Cut-off Current
*DC Current Gain
V_CEO(SUS)
I_CEO
I_CES
I_EBO
h_FE
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Output Capacitance
V_CE(sat)
V_BE(on)
f_T
* Pulse Test: PW≤300us, Duty Cycle≤2%
I_C=-30mA, I_B=0
V_CE=-30V,I_B=0
V_CE=-60V,I_B=0
V_CE=-40V,V_EB=0
V_CE=-60V,V_EB=0
V_CE=-80V,V_EB=0
V_CE=-100V,V_EB=0
V_EB=-5V,I_C=0
V_CE=-4V,I_C=-0.3A
V_CE=-4V,I_C=-3A
I_C=-6A,I_B=-600mA
V_CE=-4V,I_C=-6A
V_CE=-10V,I_C=-500mA
f=1㎒
PNP Epitaxial
Silicon Darlington
Transistor
TO-220
1. Base
2. Collector
3. Emitter
12 ₃
Min
-40
-60
-80
-100
30
15
3.0
Max
Unit
V
V
V
V
-0.7
㎃
-0.7
㎃
-400
㎂
-400
㎂
-400
㎂
-400
㎂
-1
㎃
75
-1.5
V
-2.0
V
㎒
◎ SEMIHOW REV.A0,Oct 2007