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| TIP41 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W) | |||
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TIP41/41A/41B/41C
Medium Power Linear Switching Applications
- Complement to TIP42/42A/42B/42C
Absolute Maximum Ratings Ta=25â unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP41
: TIP41A
VCBO
40
V
60
V
: TIP41B
80
V
: TIP41C
100
V
Collector-Emitter Voltage : TIP41
: TIP41A
VCEO
40
V
60
V
: TIP41B
80
V
: TIP41C
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25â)
Collector Dissipation(Tc=25â)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
V
6
A
10
A
2
A
2
W
65
W
150
â
-65~150 â
NPN Epitaxial
Silicon Darlington
Transistor
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25â unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP41
IC=30mA, IB=0
40
V
: TIP41A
60
V
: TIP41B
80
V
: TIP41C
100
V
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
ICEO
VCE=30V,IB=0
VCE=60V,IB=0
0.7
ã
0.7
ã
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
ICES
VCE=40V,VEB=0
VCE=60V,VEB=0
VCE=80V,VEB=0
VCE=100V,VEB=0
400
ã
400
ã
400
ã
400
ã
Emitter Cut-off Current
IEBO
VEB=5V,IC=0
1
ã
*DC Current Gain
hFE
VCE=4V,IC=0.3A
VCE=4V,IC=3A
30
15
75
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=6A,IB=600mA
1.5
V
*Base-Emitter ON Voltage
VBE(on)
VCE=4V,IC=6A
2.0
V
Output Capacitance
fT
VCE=10V,IC=500mA,f=1ã
3.0
ã
* Pulse Test: PWâ¤300us, Duty Cycleâ¤2%
â SEMIHOW REV.A0.Oct 2007
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