 English |
|
|
|
|
|
|
|
| TIP31 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W) | |||
| |||
| ◁ |
TIP31/31A/31B/31C
Medium Power Linear Switching Applications
- Complement to TIP32/32A/32B/32C
Absolute Maximum Ratings Ta=25â unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP31
: TIP31A
VCBO
40
V
60
V
: TIP31B
80
V
: TIP31C
100
V
Collector-Emitter Voltage : TIP31
: TIP31A
VCEO
40
V
60
V
: TIP31B
80
V
: TIP31C
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25â)
Collector Dissipation(Tc=25â)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
V
3
A
5
A
1
A
2
W
40
W
150
â
-65~150 â
PNP Epitaxial
Silicon Darlington
Transistor
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25â unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
VCEO(SUS)
: TIP31
IC=30mA, IB=0
40
V
: TIP31A
60
V
: TIP31B
80
V
: TIP31C
100
V
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
ICEO
VCE=30V,IB=0
VCE=60V,IB=0
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
ICES
VCE=40V,VEB=0
VCE=60V,VEB=0
VCE=80V,VEB=0
VCE=100V,VEB=0
Emitter Cut-off Current
IEBO
VEB=5V,IC=0
*DC Current Gain
hFE
VCE=4V,IC=1A
25
VCE=4V,IC=3A
10
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=3A,IB=375mA
*Base-Emitter ON Voltage
VBE(on)
VCE=4V,IC=3A
Output Capacitance
fT
VCE=10V,IC=500mA,f=1ã
3.0
* Pulse Test: PWâ¤300us, Duty Cycleâ¤2%
0.3
ã
0.3
ã
200
ã
200
ã
200
ã
200
ã
1
ã
50
1.2
V
1.8
V
ã
â SEMIHOW REV.A0,Oct 2007
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese