TIP145T Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base-Emitter Shunt Resistors

TIP145T/146T/147T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP140/141/142
Absolute Maximum Ratings T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP145T
V_CBO
-60
V
: TIP146T
-80
V
: TIP147T
-100
V
Collector-Emitter Voltage : TIP145T
V_CEO
-60
V
: TIP146T
-80
V
: TIP147T
-100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V_EBO
-5
V
I_C
-10
A
I_CP
-15
A
I_B
-0.5
A
P_C
2
W
P_C
80
W
T_J
150
℃
T_STG
-65~150
℃
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 ₃
Electrical Characteristics T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP145T
: TIP146T
: TIP147T
V_CEO(SUS)
I_C=-30mA, I_B=0
Collector Cut-off Current
I_CEO
: TIP145T
: TIP146T
: TIP147T
Collector Cut-off Current
I_CBO
: TIP145T
: TIP146T
: TIP147T
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
V_BE(on)
C_ob
V_CE=-30V,I_B=0
V_CE=-40V,I_B=0
V_CE=-50V,I_B=0
V_CE=-60V,I_E=0
V_CE=-80V,I_E=0
V_CE=-100V,I_E=0
V_EB=-5V,I_C=0
V_CE=-4V,I_C=-5A
V_CE=-4V,I_C=-10A
I_C=-5A,I_B=-10mA
I_C=-10A,I_B=-40mA
V_CE=-4V,I_C=-10A
V_CB=10V,I_E=0, f=0.1MHz
Min
-60
-80
-100
1000
500
Max
Unit
V
V
V
-2
㎃
-2
㎃
-2
㎃
-1
㎃
-1
㎃
-1
㎃
-2
㎃
-2
V
-3
V
-3
V
200
㎊
◎ SEMIHOW REV.A0,Oct 2007