TIP140T Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,80W)

TIP140T/141T/142T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP145/146/147
Absolute Maximum Ratings T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP140T
V_CBO
60
V
: TIP141T
80
V
: TIP142T
100
V
Collector-Emitter Voltage : TIP140T
V_CEO
60
V
: TIP141T
80
V
: TIP142T
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V_EBO
5
V
I_C
10
A
I_CP
15
A
I_B
0.5
A
P_C
2
W
P_C
80
W
T_J
150
℃
T_STG
-65~150
℃
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 ₃
Electrical Characteristics T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
V_CEO(SUS)
I_C=30mA, I_B=0
Collector Cut-off Current
I_CEO
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
I_CBO
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
V_BE(on)
C_ob
V_CE=30V,I_B=0
V_CE=40V,I_B=0
V_CE=50V,I_B=0
V_CE=60V,I_E=0
V_CE=80V,I_E=0
V_CE=100V,I_E=0
V_EB=5V,I_C=0
V_CE=4V,I_C=5A
V_CE=4V,I_C=10A
I_C=5A,I_B=10mA
I_C=10A,I_B=40mA
V_CE=4V,I_C=10A
V_CB=10V,I_E=0, f=0.1MHz
Min
60
80
100
1000
500
Max
Unit
V
V
V
2
㎃
2
㎃
2
㎃
1
㎃
1
㎃
1
㎃
2
㎃
2
V
3
V
3
V
200
㎊
◎ SEMIHOW REV.A0,Oct 2007