TIP121 Datasheet, PDF (2/5 Pages) SemiHow Co.,Ltd. – Monolithic Construction With Built In Base-Emitter Shunt Resistors

TIP120/121/122
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP125/126/127
Absolute Maximum Ratings T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP120
: TIP121
: TIP122
V_CBO
60
V
80
V
100
V
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
V_CEO
60
V
80
V
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V_EBO
I_C
I_CP
I_B
P_C
P_C
T_J
T_STG
5
V
5
A
8
A
120
㎃
2
W
65
W
150
℃
-65~150
℃
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 ₃
Electrical Characteristics T_a=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
V_CEO(SUS)
I_C=100mA, I_B=0
Collector Cut-off Current
I_CEO
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
I_CBO
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
V_BE(on)
C_ob
V_CE=30V,I_B=0
V_CE=40V,I_B=0
V_CE=50V,I_B=0
V_CE=60V,I_E=0
V_CE=80V,I_E=0
V_CE=100V,I_E=0
V_EB=5V,I_C=0
V_CE=3V,I_C=0.5A
V_CE=3V,I_C=3A
I_C=3A,I_B=12mA
I_C=5A,I_B=20mA
V_CE=3V,I_C=3A
V_CB=10V,I_E=0, f=0.1MHz
Min
60
80
100
1000
1000
Max
Unit
V
V
V
0.5
㎃
0.5
㎃
0.5
㎃
0.2
㎃
0.2
㎃
0.2
㎃
2
㎃
2
V
4
V
2.5
V
200
㎊
◎ SEMIHOW REV.A0,Oct 2007