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| KSH5027F Datasheet, PDF (2/5 Pages) SemiHow Co.,Ltd. – High Voltage and High Reliability | |||
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KSH5027F
High Voltage and High Reliability
- High Speed Switching
- Wide SOA
Absolute Maximum Ratings TC=25â unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25â)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
1100
800
7
3
10
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W
â
â
3 Amperes
NPN Silicon Power Transistor
50 Watts
TO-220F
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics TC=25â unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
VCBO
VCEO
VEBO
ICEX(sus)
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IE=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
Collector Cut0off Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
ton
tstg
tf
VCB=800V,IE=0
VEB=5V,IC=0
VCE=5V,IC=0.2A
VCE=5V,IC=1A
IC=1.5A,IB=0.3A
IC=1.5A,IB=0.3A
VCB=10V,IE=0, f=0.1MHz
VCE=10V,IC=0.2A
Vcc=400V, Ic=5A
IB1=-2.5A, IB2=2A
RL=200Ω
Note : hFE1 Classification
R : 15 ~ 30, O : 20 ~ 40
Min Typ. Max Unit
1100
V
800
V
7
V
800
V
10
ã
10
ã
10
40
8
2
V
1.5
V
60
ã
15
ã
0.5
ã²
3.0
ã²
0.3
ã²
â SEMIHOW REV.A0,Oct 2007
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