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KSH1408F Datasheet, PDF (2/4 Pages) SemiHow Co.,Ltd. – Static Characteristic
KSH1408F
Switch Mode series NPN Epitaxial silicon Power Transistor
- Low voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Max. Operating Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
80
80
5
4
8
0.4
25
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
4 Amperes
NPN Silicon Power Transistor
25 Watts
TO-220F
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCEO
ICBO
IEBO
hFE1
hFE2
IC=50mA, IB=0
VCB=80V,IE=0
VEB=5V,IC=0
VCE=5V,IC=0.5A
VCE=5V,IC=3A
*Collector-Emitter Saturation Voltage
VCE(sat) IC=3A,IB=0.3A
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VBE(sat)
Cob
fT
IC=3A,IB=0.3A
VCB=10V, f=1MHz
VCE=5V, IC=0.5A
Min Typ. Max Unit
80
V
30
uA
10
uA
40
240
15
2
V
1.5
V
90
㎊
8
㎒
Note.
Package Mark information.
R
40 ~ 80
S
S
SemiHow Symbol
hFE1
O
Classification
70 ~ 140
YWW Z
YWW Y; year code, WW; week code
Y
120 ~ 240
KSH1408F
Z
hFE1 Classification
◎ SEMIHOW REV.A1,Dec 2011