KSH13009AL Datasheet, PDF (2/5 Pages) SemiHow Co.,Ltd. – Switch Mode series NPN silicon Power Transistor

KSH13009AL
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
700
400
9
12
24
6
130
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
12 Amperes
NPN Silicon Power Transistor
100 Watts
TO-3P
1. Base
2. Collector
3. Emitter
12 ₃
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min Typ. Max Unit
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
V_CEO(sus)
I_EBO
h_FE1
h_FE2
V_CE(sat)
*Base-Emitter Saturation Voltage
V_BE(sat)
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
R
C_ob
f_T
t_on
t_stg
t_F
8 ~ 17
hFE1
Classification
O
Y
15 ~ 28
26 ~ 39
Y1(26~33), Y2(31~39)
I_C=10mA, I_B=0
V_EB=9V,I_C=0
V_CE=5V,I_C=5A
V_CE=5V,I_C=8A
I_C=5A,I_B=1A
I_C=8A,I_B=1.6A
I_C=12A,I_B=3A
I_C=5A,I_B=1A
I_C=8A,I_B=1.6A
V_CB=10V, f=0.1MHz
V_CE=10V,I_C=0.5A
Vcc=125V, Ic=8A
I_B1=1.6A, I_B2= -1.6A
R_L=15.6Ω
400
V
1
㎃
8
40
6
30
1
V
1.5
V
3
V
1.2
V
1.6
V
180
㎊
4
㎒
1.1
㎲
3
㎲
0.7
㎲
Package Mark information.
S
YWW Z
KSH13009AL
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007