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HRP80N08K Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 80V N-Channel Trench MOSFET | |||
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Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ã
2.2
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 40 A
--
gFS Forward Transconductance
VDS = 20, ID = 40 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ã
80
VDS = 64 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, TJ = 125â
--
IGSS Gate-Body Leakage Current
VGS = ±25 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 40 V, ID = 30 A,
--
RG = 6 â¦
--
--
--
VDS = 64 V, ID = 30 A,
--
VGS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 30 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/μs
--
--
3.8
V
6.7 8.0 mâ¦
70
--
S
--
--
V
--
1
ã
-- 100 ã
-- ±100 ã
2900 --
ã
500 --
ã
190 --
ã
0.7
--
â¦
40
--
ã±
40
--
ã±
130 --
ã±
35
--
ã±
60
--
nC
13
--
nC
16
--
nC
-- 120
A
-- 420
--
1.3
V
65
--
ã±
110 --
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=25A, VDD=30V, RG=25â¦, Starting TJ =25°C
â SEMIHOW REV.A0, December 2014
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